Abstract
FeSxOy/ZnO heterostructures are fabricated by the electrochemical deposition (ECD) method. ZnO is first deposited by galvanostatic ECD on indium-tin-oxide (ITO) substrate and then FeSxOy is deposited on ZnO. In ECD of FeSxOy, three-step pulse bias is adopted in addition to DC bias. The addition of a complexing agent (tartaric acid) and stirring of the solution is also examined. With tartaric acid in the solution, FeSxOy deposition on ZnO failed. Without tartaric acid, FeSxOy/ZnO heterojunctions showing rectifying electrical properties are fabricated. Weak photovoltaic effects are confirmed only when FeSxOy is deposited by three-step pulse with stirring.
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