Abstract
The feasibility of nanoimprint lithography as an alternative strategy for the pattern definition of Si3N4 based PIC (photonic integrated circuit) is demonstrated in this study. The PICs were patterned by the substrate conformal imprint lithography (SCIL), a variation of UV nanoimprint lithography. The optical quality of the patterned PICs was determined by measuring the optical transmission losses of the fabricated PICs. The quality was then compared with the PICs patterned by an optical stepper. The analysis shows that the optical quality of the patterns fabricated by the SCIL process is similar to the patterns defined by an optical stepper. Our study demonstrates clearly that the SCIL is an alternative to established lithographic approaches in regards to material or pattern resolution.
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