Abstract
We successfully fabricate p-type ZnO:N films by using rf magnetron sputtering and in situ annealing in O2 atmosphere. These p-type ZnO:N films can be used as p-type window materials for extremely thin absorber (ETA) solar cells composed of quartz glass/p-ZnO:N/i-ZnO/CdSe/i-ZnO/n-ZnO:Al. The short-circuit photocurrent density, open circuit voltage, fill factor and conversion efficiency of the ETA solar cells can be determined to be 8.549 mA/cm2, 0.702V, 0.437 and 2.623%, respectively, through measurements of photovoltaic properties under illumination with a 100mW/cm2 at air-mass (AM) 1.5.
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