Fabrication of p-type Organic Field Effect Transistor using PMMA:TiO2 as Nanocomposite Dielectric Layer

Abstract

This paper report on the fabrication of p-type organic field effects transistor (OFET) using low temperature spin coating deposition technique. The p-type OFETs were fabricated using poly (3-hexylthiophene-2,5-diyl) (P3HT) and poly (methyl methacrylate):titanium dioxide (PMMA:TiO2) nanocomposite material were used as semiconductor and the gate dielectric, respectively. The electrical and structural properties of OFETs were analysed using current-voltage (I-V), atomic force microscopy (AFM) and RAMAN spectroscopy. Results from I-V show that the fabricated p-type OFET has moderate performance with threshold voltage, VTH is -3V and mobility, μ is 2.01 cm2 V-1s.