Abstract
This is the first time report of transparent p-SnO/n-SnO2 heterojunction diodes fabricated by spray pyrolysis. Intrinsic device’s parameters such as ideality factor, parasitic series resistance and reverse saturation current of the fabricated diodes were analyzed by the theoretical model proposed by Gracia et al. Two diodes with SnO layer thicknesses 86 nm and 80 nm were fabricated and observed to have ideality factors of 2.75 and 3.56 along with parasitic series resistances of 8 KΩ and 5 KΩ respectively. The transmission percentage of diode was increased from 70% to 88% on reducing the thickness of the SnO layer.
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