Fabrication of p+-gate InAs-channel HEMT based on InP

Abstract

We have successfully fabricated a p +-gate InGaAs/InAlAs HEMT with a thin InAs layer inserted in the InGaAs channel. An intrinsic transconductance of over 400 mS mm −1 and maximum drain current of 250 mA mm −1 were obtained in a 1 μm gate length device with relatively thick gate-to-channel barrier of 375Å. We have confirmed that the p +-gate InAs-channel HEMT operates as well as conventional Schottky gate HEMT.