Abstract
A novel InAlAs InGaAs inverted HEMT with a thin InAs layer inserted into the InGaAs channel (InAs-inserted-channel i-HEMT) is proposed and its electron transport properties and device performances are investigated. By optimizing the thickness of the InAs layer and its distance from the underlying InAlAs spacer layer, a maximum mobility of 13,600 cm 2/Vs at 300 K and 63,500 cm 2/Vs at 77 K were attained. The inverted HEMT structure resulted in an extremely high voltage gain, over 60 in a 0.7 μm gate-length device, and a gate-to-drain breakdown voltage as high as 9 V. This voltage gain resulted in a maximum oscillation frequency for a 0.7 μm gate-length device of 81 GHz, 14% higher than that of an InAs-inserted-channel normal HEMT.
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