Abstract
In this study, we introduce the fabrication of an organic-inorganic hybrid architecture for photodetection applications that is constructed from Ethyl Nile Blue (ENB) and p-type silicon. The optical absorption and emission spectra of the deposited ENB films are investigated yielding high UV–visible absorption features with a broad blue and violet emission band. The developed Ag/ENB/p-Si/Al heterojunction's microelectronic characteristics are assessed under dark conditions and at various temperatures (303−353) K. The variation of the barrier height and ideality factor with temperature are interpreted in detail. Considering the barrier height inhomogeneity, the modified Richardson constant has been estimated and found to be 30 A/cm2 K2. Analysis and discussion have been conducted about the charge carrier dynamics scenario under forward and reverse bias settings. The implemented hybrid device's photoresponse is evaluated at various light intensities (20–100 mW/cm2). In comparison to other organic-inorganic hybrid photodetectors, the manufactured hybrid device demonstrated a promising, stable, and reliable performance. The manufactured photodetector exhibited R, D* , LDR, SNR, and (tr/tf) time at power density 100 mW/cm2 of about 1.85 mA/W, 8.5 × 108 Jones, 55.9 dB, 626, and (69.7 ms/52.6 ms), respectively.
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