Abstract
Planar waveguides were fabricated in nonlinear crystal KTiOAsO 4 by the implantation of 2.6 MeV He + ions (at a dose of 2 × 10 16 ions/cm 2) or 3.0 MeV Si + ions (at a dose of 2 × 10 15 ions/cm 2) at room temperature. The prism-coupling method was carried out to measure the dark modes in the waveguides and reflectivity calculation method was applied to fitting the refractive index profiles of the waveguides. TRIM’98 (Transport and Range of Ions in Matter) code was used to simulate the damage profile in KTiOAsO 4 by 2.6 MeV He + or 3.0 MeV Si + ion implantation, which is helpful to a better understanding of the waveguide formation.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call