Abstract
Electron-beam patterned wires in InAs/AlGaSb heterostructures were fabricated using chemically assisted ion-beam etching (CAIBE) with Cl2 and an Ar ion beam. The CAIBE process yielded very vertical sidewalls and smooth wire edges. CAIBE was also used to etch deep trenches through the AlGaSb barrier layer which provided isolation for the wires and suppressed the parallel conductance of the AlGaSb barrier. The interdevice leakage current was also decreased by a final CAIBE device isolation step. Wires 1 μm long and having varying widths between 70 and 210 nm have been fabricated.
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