Fabrication of nanopillar structure by silica nanosphere lithography and passivation with wet chemical oxidation cleaning

Abstract

This work focus the fabrication and passivation of Si nanopillar structure. Si nanopillar structures are fabricated by well controlled silica nanosphere lithography with metal assisted chemical etching (MACE). For high quality passivation, nanopillar structures are cleaned using general Si cleaning process with wet oxidation. The wet oxidation process helps to reduce surface state density of nanopillar structure. Nanopillar structure is passivated using several methods as thermal, wet oxide, a-Si:H, organic and aluminum oxide (Al 2 O 3 ). Al 2 O 3 passivation shows the highest lifetime and implied open circuit voltage (Voc) as 31.9 μs and 595 mV.