Abstract
We are developing nanoelectrodes for investigation of magneto-transport mechanisms through a single or a few nanoparticles. In this work, we present two different ways for patterning these nanodevices, based on high resolution electron beam lithography (HREBL). The first method consists in defining electrode shape patterns in a positive PMMA resist layer by HREBL and then lifting-off a metallic or ferromagnetic film deposited by ion beam assisted evaporation. The second method consists in etching a continuous metallic or ferromagnetic thin layer deposited by sputtering, using as etching mask a negative PMMA resist previously patterned by HREBL. The entire processes are described in detail and the geometrical quality and resolution of the nanoelectrodes obtained in each case are analysed and compared by scanning electron microscopy.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
