Abstract
Graphical abstractDisplay Omitted Highlights? Quantitative comparison of Monte-Carlo simulation codes. ? Investigating the influence of secondary electron usage on the Point-Spread-Function. ? Monitoring influence on 100keV high resolution electron beam lithography. ? SE consideration leads to dose uniformity advantage and increased process window. ? Observing high impact on pattern containing structures and gaps smaller than 100nm. In this work we evaluate two different Monte-Carlo simulation approaches for determining the Point Spread Function (PSF) for 100keV high resolution electron beam lithography. One method takes secondary electron generation into account, whereas the other one does not. The two different PSF determined for the same substrate are used for the proximity effect correction of two types of special designed test patterns. The exposed structures show indeed a significant influence of the secondary electrons enhancing the PSF in the mid-range distance of 10nm to 1µm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
