Abstract
Abstract We investigate the ability for High Resolution Electron Beam Lithography (HREBL) to fabricate multiple nano-electrodes with the smallest gap in the smallest area. By using both standard PolyMethylMethAcrylate (PMMA) as resist and standard MIBK/IPA development, we show that up to 10 nano-electrodes can be realized in an area as small as 65 nm. The obtained structures have been used either for the realization of embedded electrodes in SiO 2 by wet etching followed by lift-off, or for the fabrication of molds for Nano-Imprint Lithography using PMMA as a mask for Reactive Ion Etching of silicon. Preliminary results on the replication of these molds using a soft nano-imprint process are also presented.
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