Fabrication of MOSFETs by 3D soft UV-nanoimprint

Abstract

► We report on the fabrication of fully functional top gate MOSFET using soft UV-NIL. ► Flexible soft 3D mold was used for pattern definition. ► All necessary architecture of MOSFET is replicated in only one process step. ► Self alignment utilized by 3D soft mold reduces process steps from 15 to 9. So far, metal oxide semiconductor field-effect transistors (MOSFETs) have been fabricated using either optical lithography or imprint lithography with an alignment step between the different layers. Here, we report on the new process for the fabrication of top gate MOSFETs where the number of fabrication steps is reduced significantly. The 3D topography of a top gate MOSFET using as primary master is inversely replicated into a flexible mold that is subsequently transferred to the imprint resist layer. By reactive ion etching, this self aligned 3D pattern is transferred into the underlying semiconductor stack creating functional transistor structures. Preliminary electrical characterizations demonstrate fully operational transistor functions.