Abstract
The crystal structure, composition, and magnetic, and electric-transport properties of Mn x Ga y layers deposited onto a GaAs surface by pulsed laser deposition in a hydrogen atmosphere, pulsed laser deposition in vacuum, and electron-beam evaporation in vacuum are investigated. It is shown that the features of each technique affect the composition and crystal structure of the formed layers, and the degree of abruptness and crystalline quality of the heterointerface. Apparently, the composition and crystal structure are responsible for modification of the ferromagnetic properties. The defects in the heterointerface affect the properties of the Mn x Ga y /GaAs diode structure, in particular, the height of the Schottky diode potential barrier.
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