Abstract
This paper presents the new wafer probe card technology with 40 pm pitch and 605 pads by MEMS technology. We have fabricated a micro-probe beams using porous silicon micromachining, RIE (reactive ion etching), and electroplating process. In order to form electroplating mold, we used a thick negative SU-8 photoresist. To use probe beams as tip of probe card, their thermal and mechanical properties was investigated. Probe beams are curled up as a result of surface tension and difference in the thermal expansion coefficients between the thin films on the beams.
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