Abstract
Periodic pyramid and random nanostructure binary structures of single-crystal silicon wafer was fabricated by chemical etching method. Much lower reflectance of silicon wafer with these structures was obtained compared with that of single pyramid arrays. The morphology and reflectivity of these structures, as well as the influence on nanostructures caused by rapid thermal annealing (RTA) time and temperature of gold film, were studied. An average reflectance of 1.97% was obtained under optimized condition.
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