Abstract
We demonstrate the fabrication of mesoscopic devices on aluminum, titanium, and silicon-on-insulator thin films by using atomic force microscopic electric field induced oxidation together with selective wet etching. The fabricated device structure is a percolating network consisting of conducting dots (50–100 nm in diameter) randomly distributed within an area of 1×1 μm2. Details on how to fabricate the network structure and the making of electrical contacts to the device will be focused upon. Good agreement between results from transport measurement of an aluminum test sample we made and data from the literature warrants reliability of our sample fabrication technique.
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