Abstract

We report successful fabrication of low-loss SOI nano-waveguides with integrated PIN diode structures. The entire fabrication process is done on a 200 mm BiCMOS toolset using front-end-of-line (FEOL) and back-end-of-line (BEOL) processes and does not show any undesirable influence upon the photonic performance. Such a waveguide technology forms an attractive platform for a wide range of nonlinear applications due to efficient free carrier removal as well as use of standard substrates and processing technology. Nonlinear experiments were conducted to investigate the potential of the introduced technology. The performance of the designed waveguides can be used as a benchmark for future development of proposed platform for integrated silicon photonics and electronics circuits.

Highlights

  • Recognized as a promising innovative field, silicon photonics has gained a lot of interest during the last decade

  • Free carriers pose a serious challenge to nonlinear devices using continues wave (CW) light in the telecom wavelength range, which is highly relevant to the communications sector

  • The present paper will provide a first overview of the nano-waveguide technology platform that we developed to meet the pre-requisites of a high-performance nonlinear silicon photonics technology, i.e. nano-waveguides with low linear loss combined with PIN diodes

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Summary

INTRODUCTION

Recognized as a promising innovative field, silicon photonics has gained a lot of interest during the last decade. Cut-back measurements were performed at a wavelength of 1550 nm with waveguides of different lengths on the same chip to extract loss values To this end we designed a set of nano-strip waveguides with a core dimension of 450 nm(w) x 220 nm(h) and with length varying from 0.5 cm to 6 cm. Additional measurements from different wafers and designs show typical loss values for the present SOI nano-wire technology below 2 dB/cm, which corresponds well with the state-of-the-art. The metal electrodes are connected to the p+-doped and n+-doped regions via the contact plugs that have the shape of inverted cones

MEASUREMENT AND ANALYSIS OF INTEGRATED WAVEGUIDE PERFORMANCE
PLATFORM FOR NONLINEAR SILICON PHOTONICS
CONCLUSION

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