Fabrication of light emitting diodes transferred onto different substrates by GaN substrate separation technique

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AbstractWe have successfully transferred GaN films grown on high crystalline quality GaN substrates onto different substrates, where we have developed a laser lift‐off technique with a green laser and an absorption‐enhanced InGaN layer as a sacrificial layer (a layer to absorb laser beams). We have also achieved an output power of 13.0 mW at 20 mA with a wavelength of approximately 410 nm and an external quantum efficiency of 21.6% for light emitting diodes transferred on Si substrates by using this method (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)