Abstract
Indium tin oxide (ITO)/ two-layer thin films were fabricated by radio-frequency magnetron sputtering and their gas sensing properties were investigated, particularly focusing on the low temperature gas detection. ITO film was an island structure of cone shape, and subsequent deposition produced a uniform and homogeneous film of thick. The phase and chemical composition analyses by X-ray diffraction, X-ray photoelectron spectroscopy, and Auger electron spectroscopy indicated that indium (In) and tin (Sn) ions were interdiffused during annealing, resulting in the ITO film with a concentration gradient from Sn-rich (surface) to In-rich (substrate). Compared to a thin film, the resistance of two-layer films was decreased by several orders of magnitude, which makes it possible to detect the gases at as low as . The two-layer gas sensor exhibited the enhanced gas response (sensitivity) and selectivity toward against , , and gases.
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