Abstract
InN/Si heterojunctions consisting of InN with an oxygen concentration of ∼3% and a bandgap of 1.8 ∼ 2.0 eV were formed by MBE. The band alignment of the heterojunctions turned out be type II with a band discontinuity of 1.49 ∼ 1.60 eV. A SiNx intermediate layer with a thickness of 2.1 nm was observed by angle-resolved X-ray photoemission spectroscopy. The heterojunction showed good rectifying characteristics with a reverse current of 1 × 10−7 A/cm2. Separation of the InN/Si interface and the p–n interface by insertion of n-Si layer with a thickness of 200 nm resulted in a reduction of the reverse current in the heterojunction.
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