Abstract
AlGaAs multiquantum well (MQW) lasers with buried optical guide (BOG) were fabricated using Be focused ion beam (FIB) implantation. The process is based on the effect wherein the compositional disordering of Si doped MQW is suppressed by Be ion implantation and subsequent annealing. The proposed process is very simple and does not require any lithographic procedure. It is confirmed that the fabricated laser acts as an index-guided laser. This technique is a promising new step toward optoelectronic integrated circuits.
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