Abstract
A change in the density and wavelength of InAs quantum dots (QDs) on InGaAsP/InP(100) substrate grown by metalorganic vapor-phase epitaxy (MOVPE) in accordance with variation in the growth conditions was studied, aiming at optical device applications in the 1.55 μm region. In the moderate V/III ratio region, the size of QDs was found to decrease while the density increased as the group-V source was reduced, but on the other hand, both of them increased monotonously with increasing InAs supply. The combination of changing the V/III ratio and InAs supply allowed us to control the density and wavelength of QDs independently so that QDs with a density as high as 5.6×1010 and a 1.6 μm emission were obtained. The letter reports the MOVPE growth technique of QDs on InGaAsP/InP(100), which connects QDs with mature 1.55 μm device technology.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
