Abstract
The fabrication of highly-oriented β-Ga2O3 thin films on cyclo-olefin polymer (COP) substrates with oxide-buffer layers of amorphous AlO x and c-axis-oriented crystalline ZnO by excimer laser annealing at RT was investigated. An amorphous GaO x thin film deposited on a COP substrate by pulsed laser deposition at RT was irradiated with a pulsed KrF excimer laser from the film surface at RT in air. X-ray diffraction, reflection-high-energy-electron diffraction, and high-resolution transmission-electron microscopy results revealed solid-state crystallization of the uniaxial-oriented β-Ga2O3 (01) thin film on the ZnO/AlO x -buffered COP substrate. The obtained β-Ga2O3 thin film exhibited green-, blue-, and UV-band cathode-luminescence.
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