Abstract
A new sputtering type of ion source which can generate ions of heavy metals such as niobium has been developed to use for ion beam deposition of thin films. The ion source is composed of two targets facing each other, anode and a magnetic coil, which are arranged in the same way as that in Targets Facing type of high rate sputtering method. Ion beam of high current density above 1 mA/cm2 (2.5 cm in diameter) can be obtained at very low accelerating voltage below 50 V. The ion beam deposition apparatus with this ion source has the strict controllabilities over the most of film preparation conditions such as deposition rate, film composition, substrate temperature and the energy of arrival of film atoms.
Published Version
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