Abstract
Yttrium Barium Copper Oxide ramp junctions have been fabricated via off-axis rf magnetron sputtering using Praseodymium Barium Copper Gallium Oxide as a barrier material. Optimal wafer processing conditions and junction behavior as a function of barrier thickness are presented. IcRn values of 500 microvolts at 65 K have been achieved with a two step deposition/anneal process using Praseodymium Barium Copper Gallium Oxide as the barrier. This junction process has been demonstrated on 2 inch wafers.
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