Abstract
We present an optimized process using very high resolution Electron Beam Lithography for the fabrication of high density nanostructures gratings, which can be used as molds for nanoimprint lithography. In our approach conventional PolyMethylMethAcrylate resist is exposed and, after lift-off and Reactive Ion Etching, pillars of 100 nm high are obtained on SiO 2. Optimized conditions for the development of the resist after exposure are presented which enables the fabrication of high quality pillar gratings of 30nm pitch (∼700Gbit/in 2), and line gratings of 40nm pitch.
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