Fabrication of high breakdown voltage silicon Schottky barrier diodes using various edge termination structures

Abstract

In this work, the design and fabrication of Au/n-Si Schottky barrier diodes (SBDs) with various edge termination schemes, including a reduced-surface-field-type lateral super-junction, a polycrystalline silicon (poly-Si) floating ring, and a p +-poly-Si guard ring, are presented. Experimental results show that the reverse leakage current of the proposed SBDs was reduced and the breakdown voltage increased with an increase of the poly-Si width of the guard ring. It was found that the device and fabrication technology developed in the present study is applicable to the realization of SBDs with a high breakdown voltage (≥ 160 V), a low reverse current density (≤ 5.6 μA/cm 2), a low forward voltage drop (≤ 5.6 V @ 1 A/cm 2), and an adjustable Schottky barrier height of 0.764 to 0.784 eV.