Abstract
In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm2@100 V), and a Schottky barrier height of 1.074 eV.
Highlights
A Schottky barrier diode (SBD) can be formed by a semiconductor substrate coming in contact with a metal electrode
We discuss the electrical properties of the fabricated AZO/Si SBDs
Thermionic emission theory indicates that the current density in an SBD is given by the Equation (1) [14]:
Summary
A Schottky barrier diode (SBD) can be formed by a semiconductor substrate coming in contact with a metal electrode. An Alx Ox guard ring was added to the AZO/n-Si SBDs by using atomic layer deposition (ALD), followed by annealing in a N2 atmosphere at 400 ◦ C for 30 min. The reverse saturation current density of the AZO/Si SBDs deposited at 300 ◦ C
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