Fabrication of hall device structures in 3C-SiC using microelectromechanical processing technology

Abstract

A fabrication method for the construction of Hall device structures in poly-3C-SiC film grown onto poly-silicon on silicon dioxide on silicon substrate has been developed. The technique allows three-dimensional structures to be formed in 3C-SiC on silicon substrates. Because of the procedures’ compatibility with conventional MEMS construction processes, the design can be integrated during MEMS processing to enable electronic properties of the 3C-SiC film to be characterised simultaneously. For the Hall bar structures fabricated in our current 3C-SiC films, a high resistive behaviour for the undoped 3C-SiC films has been measured while the intentionally nitrogen doped films show around 4–6 × 10 20/cm 3 carrier concentration with a Hall mobility of around 2 cm 2/V s.