Abstract
High sensitivity detection of terahertz waves can be achieved with a graphene nanomesh as grating to improve the coupling efficiency of the incident terahertz waves and using a graphene nanostructure energy gap to enhance the excitation of plasmon. Herein, the fabrication process of the FET THz detector based on the rectangular GNM (r-GNM) is designed, and the THz detector is developed, including the CVD growth and the wet-process transfer of high quality monolayer graphene films, preparation of r-GNM by electron-beam lithography and oxygen plasma etching, and the fabrication of the gate electrodes on the Si3N4 dielectric layer. The problem that the conductive metal is easy to peel off during the fabrication process of the GNM THz device is mainly discussed. The photoelectric performance of the detector was tested at room temperature. The experimental results show that the sensitivity of the detector is 2.5 A/W (@ 3 THz) at room temperature.
Highlights
Due to the ultrathin planar structure of graphene, the performances of graphene-based field-effect transistor (GFET) devices are not obviously reduced when they shrink in size
Terahertz detectors based on the GFET structure are developed and reported [6,7,11,12,13]
Monolayer graphene was grown on copper foil by chemical vapor deposition (CVD), and the high-quality graphene film was obtained by wet transfer on the SiO2 /Si substrate
Summary
A conjugated carbon sheet arranged in a 2D hexagonal lattice [1] and an important alternative to extend the validity of Moore’s law of electrons in semiconductors [2], has good transmission performance, a larger volume miniaturization space and a lower cost by virtue of ultrahigh electron mobility and ultrathin material thickness [3,4,5].Due to the ultrathin planar structure of graphene, the performances of graphene-based field-effect transistor (GFET) devices are not obviously reduced when they shrink in size.The fabrication of the device is compatible with current CMOS technology, making GFET a highly competitive choice for high-performance, high-integration chips in the future [6,7,8].At present, terahertz technology is widely used in many areas, such as defense, medical diagnosis, security monitoring, communication technology and space exploration.The development of terahertz technology has put forward higher requirements for terahertz detectors. Due to the ultrathin planar structure of graphene, the performances of graphene-based field-effect transistor (GFET) devices are not obviously reduced when they shrink in size. Due to the inherent limitations of electron velocity, the performance of traditional microwave electronic transistors decreases rapidly as the frequency approaches to the terahertz (THz) band (>0.1 THz). It is difficult for the infrared optical devices to have good applications at frequencies below 20 THz [9]. Terahertz detectors based on the GFET structure are developed and reported [6,7,11,12,13]
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