Abstract
In recent years, graphene nanomesh (GNM), a material with high flexibility and tunable electronic properties, has attracted considerable attention from researchers due to its wide applications in the fields of nanoscience and nanotechnology. Herein, we have processed large-area, uniform arrays of rectangular graphene nanomesh (r-GNM) and circular graphene nanomesh (c-GNM) with different neck widths by electron beam lithography (EBL). The electronic properties of those high-quality GNM samples have been characterized systematically. Electrical measurements illustrated that top-gated field effect transistors with different neck widths of the GNM possessed different Ion/Ioff ratios. In particular, the devices based on r-GNM with a neck width of 30 nm were found to possess the largest Ion/Ioff ratio of ~ 100, and the band gap of the r-GNM was estimated to be 0.23 eV, which, to the best of authors’ knowledge, is the highest value for graphene ribbons or a GNM with a neck width under 30 nm. Furthermore, the terahertz response of large-area r-GNM devices based on the photoconductive effect was estimated to be 10 mA/W at room temperature. We also explored the practical application of terahertz imaging, showing that the devices can be used in a feasible setting with a response time < 20 ms; this enables accurate and fast imaging of macroscopic samples.
Highlights
Graphene, a single layer of an sp2-hybridized carbon film, has drawn great attention in the last few years, as it possesses unique optoelectronic properties, such as high carrier mobility, zero band gap, and frequency-independent absorption
Electrical measurements were performed at room temperature to gain further insight into the effect of neck width in our Graphene nanomesh (GNM) on the performance of the detectors, which illustrated that devices with different neck widths of the GNM possessed different Ion/Ioff ratios and band gaps
In conclusion, top-gated Field-effect transistors (FETs) employing large-area arrays of ordered rectangular graphene nanomesh (r-GNM) and circular graphene nanomesh (c-GNM) with different neck widths were successfully processed by electron beam lithography (EBL)
Summary
A single layer of an sp2-hybridized carbon film, has drawn great attention in the last few years, as it possesses unique optoelectronic properties, such as high carrier mobility, zero band gap, and frequency-independent absorption. Sun et al proposed a simple method to open a comparable band gap in graphene by narrowing it down into a GNR and employed it in FETs, achieving large Ion/Ioff ratios of ~ 47 and ~ 105 at room temperature and 5.4 K, respectively [12].
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