Abstract
Germanium/Zinc Sulphide (Ge/ZnS) single and multilayers are deposited by ion assisted electron beam deposition on Silicon substrates for applications in the 2-15 µm wavelength region. Refractive indices of Ge and ZnS thin films are extracted from measured reflectance and transmittance spectra. Several types of mid-infrared filters (high-, anti-reflection coatings and dichroic filters) with a number of layers ranging from 3 to 29 are then designed and deposited. The optical responses of fabricated mid-infrared filters show a good agreement between experimental spectra and simulation in the case of high- and anti-reflection coatings in the long-wave infrared but also for dichroic filters with a low transmittance in the mid-wave infrared and broadband bandpass in the long-wave infrared.
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