Abstract

In these work four samples of ZnS thin films deposited on glass substrate using pulse laser deposition method with different pulse energies, the effect of the laser pulse energy on the optical properties of the four ZnS thin films fabricated was studied. Q-Switched Nd: YAG laser with the fundamental wavelength 1064 nm, laser Pulse energies of (125, 150, 175, and 200) mj with fixed number of pulses of 20, and pulse repetition rate of 5 Hz were used. The target to the substrate distance and angle were kept fixed. The film thicknesses were measured using FESEM measurement tool. The thickness of the deposited ZnS thin films was found to be linearly dependent on the pulse energy used. The transmission spectra in the tested region (532 to 915) nm were found to be in the range from 0.41 to 0.59% depending on the ZnS thin film thickness, and for each ZnS thin film the transmission spectrum is unique. The refractive indices of all samples were determined; and for each sample and it were found to change with wavelength, the highest refractive index of 5.6 at 915 nm was obtained for the sample of the smallest thickness 0.49 microns. Transmission spectra, absorption coefficients and the refractive indices they were in good agreement with the literature.

Highlights

  • Zinc Sulphide (ZnS) is a wide gap and direct transition semiconductor that belong to group II-VI semiconductors [1, 2]

  • The results of this work are here were composed of two parts; the first part is: Pulse energy deposition parameter of the PLD on the thickness of the fabricated ZnS thin films and second part is: The effect of the pulse energy on the optical properties of the produced ZnS thin films

  • Four ZnS thin films using 20 pulses with pulse repetition rate of 5 Hz and varying pulse energies of (125, 150, 175, and 200) mj were deposited on glass substrates

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Summary

Introduction

Zinc Sulphide (ZnS) is a wide gap and direct transition semiconductor that belong to group II-VI semiconductors [1, 2]. ZnS thin films are believed to be one of the most promising materials for blue light emitting diodes, and in electroluminescent displays [3]. ZnS is an important material used as an antireflection coating in heterojunction solar cells [4]. In Infrared windows [4]. There are many challenges to produce this material in thin film structure. There exist several methods to produce thin films from this material such as sol-gel, radiofrequency sputtering [5], pulse laser deposition [6], and so on

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