Abstract
AbstractWe have successfully obtained high‐quality GaN films directly on thick SiO2 patterned sapphire substrates by utilizing modified facet‐controlled epitaxial lateral overgrowth (FACELO). GaN films were grown by metalorganic vapour phase epitaxy on the stripe patterned substrates with the SiO2 thickness of 1.2 μm. The threading dislocation density reached a value as low as 5 × 107 cm–2. We have also fabricated Light emitting diodes (LEDs). The output power and external quantum efficiency of the LED operated at 20 mA were 20.74 mW and 37.1%, respectively. This is due to not only the reduced dislocation density but also the improved light extraction efficiency because of the light scattering at the patterned GaN/thick‐SiO2‐masks interface. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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