Abstract
AbstractNanosized GaN dot structures were fabricated on Si(111) substrate by droplet epitaxy using an rf plasma MBE system. The size and density of the GaN dots could be controlled by changing the amount of Ga supplied. By reducing the Ga supply, a maximum dot density of 3.3 × 1011 cm–2 was realized. Photoluminescence measurements at room temperature showed band edge emission with negligible yellow luminescence, which indicates a good optical property of GaN dots grown by this technique. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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