Abstract
AbstractThe effect of substrate surface on GaN dot structure grown on Si(111) by droplet epitaxy using an rf plasma molecular beam epitaxy (MBE) system is reported. Compared with nitridated substrates, both enhancement of Ga migration and poorer wettability were observed on oxidized substrates, inducing enlargement of Ga droplets during nitridation. We demonstrated that the size and density of GaN dots grown by droplet epitaxy are strongly affected by pre‐treatment of the substrate. In the fabrication of GaN dots by droplet epitaxy, the importance of optimizing nitridation conditions according to the substrate surface is demonstrated. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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