Abstract
Low-density InAs quantum dots (QDs) were grown by intermittent supply method in molecular beam epitaxy. QD density was controlled in a wide range of 106 to 109 cm−2 by in-situ monitoring of RHEED specular-beam intensity. Low-density InAs QDs were embedded into GaAs/AlAs micro-pillar cavity structure, which was fabricated by anisotropic wet-etching through a conventional photoresist mask. Photoluminescence (PL) spectra of single InAs QD in the micro-cavity were analyzed, and its PL intensity was three times higher than that without the cavity.
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