Abstract
Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co 2MnSi (CMS) thin film having the ordered L2 1 structure as a lower electrode, a MgO tunnel barrier, and a Co 50Fe 50 upper electrode. Reflection high-energy electron diffraction patterns observed in situ for each layer in the MTJ layer structure during fabrication clearly indicated that all layers of the CMS lower electrode, MgO tunnel barrier, and Co 50Fe 50 upper electrode grew epitaxially. The microfabricated fully epitaxial CMS/MgO/Co 50Fe 50 MTJs demonstrated relatively high tunnel magnetoresistance ratios of 90% at room temperature and 192% at 4.2 K.
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