Abstract

This paper describes a technique for fabricating three-dimensional, metallic, pyramidal microstructures with base dimensions of 1−2 μm, wall thicknesses of ∼100−200 nm, and tip-curvature radius of ∼50 nm. The procedure begins with the fabrication of pyramidal pits in the surface of an n-doped silicon substrate. An electrically insulating surface layer of SiO2 covers the regions outside the pits. These pits are patterned using either conventional photolithography or soft lithography and formed by selective anisotropic etching. The resulting topographically patterned silicon serves as the cathode for the selective electrodeposition of metal in the pyramidal pits. Removing the silicon template by etching generates free-standing, pyramidal, metallic microstructures.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.