Abstract
Flexible in-plane gate SnO₂ nanowire (NW) transistor gated by SiO₂ acting as a solid electrolyte was fabricated on a paper substrate by using a transmission electron microscopy (TEM) Ni grid shadow mask. The operating voltage of in-plane gate SnO₂ NW transistor was down to 1 V because of the large electric-double-layer (EDL) capacitance of the SiO₂ electrolyte layer. Current on/off ratio (Ion/Ioff) and field-effect electron mobility (µEF) as well as subthreshold slope of this device were ~106, 74.7cm²·V-1s-1 and 80 mV·dec-1, respectively. The proposed flexible and low-voltage SnO₂ NW transistors on paper substrate exhibit immense potential for applications in portable and flexible electronic devices.
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