Abstract
DRAM has been approaching its maximum physical limit due to the demand of smaller size and higher capacity memory resistor. The researchers have discovered the abilities of a memristor, a Non Volatile Memory (NVM) that could overcome the size and capacity obstacles. This paper discussed about the deposition of zinc oxide (ZnO) on indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrate by electrodeposition. Metallic Zn film was deposited on substrates with varying deposition time from 15 to 120 seconds in very dilute zinc chloride (ZnCl2) aqueous and subsequently oxidized at 150 °C to form ZnO/ITO coated PET junction. The deposited thin film was characterized via x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The results from I-V measurement show the deposited ZnO exhibits pinched hysteresis loop. The hysteresis loop becomes smaller with increasing deposition time. The 15 seconds electrodeposition gave the largest hysteresis loop and largest value of resistive switching ratio of 1.067. The result of the synthesized ZnO on the flexible substrate can be one of the alternatives to replace the current memory system as the flexible memory system.
Highlights
DRAM has been approaching its maximum physical limit due to the demand of smaller size and higher capacity memory resistor
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Latest advances in substrates for flexible electronics
Summary
IOP Conference Series: Materials Science and Engineering Volume 99, Issue 1, 19 November 2015, Article number 012002 4th International Conference on Electronic Devices, Systems and Applications 2015, ICEDSA 2015; Hotel IstanaKuala Lumpur; Malaysia; September 2015 through September 2015; Code 119012. F.B.a , Ani, M.H.a, Othman, R.a, Azhar, A.Z.A.a, Mohamed, M.A.b, Herman, S.H.c aDepartment of Manufacturing and Materials Engineering, International Islamic University Malaysia (IIUM), Jalan Gombak, Kuala Lumpur, Malaysia bInstitute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, UKM, Bangi, Selangor, Malaysia cNANO-Electronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, Selangor, Shah Alam, Malaysia
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