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Abstract
This paper describes a simple and effective lift-off method that relies upon a single layer of positive photoresist and lithography technology. We have succeeded in patterning narrow lines in a photoresist film by image reversal process. Image reversal with AZ 5214-E resist is characterized by contact lithography. A process of patterning different line widths was developed based on image reversal technology, using AZ5214-E, followed by pre-bake, exposure, reversal bake, flood exposure and development. We could obtain very neat patterns with 2-5μm dimensions and their relative features have been supported by scanning electron microscope (SEM) pictures. The application of the proposed process is suitable for the electrode fabrication in MEMS SAW devices.
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