Abstract

Continuous Improvements In Optical Imaging And Photoresist Technology Have Pushed Optical Lithography To Submicron Resolution. Photoresist Image Reversal (I.R.) Processing Has Evolved As An Alternative To More Complicated Resist Schemes (Contrast Enhancement Or Multilayer Resist) To Enhance The Resolution Of An Optical Exposure Tool.There Are Several Published Processing Methods And Resist Chemistries For Image Reversal Of Positive Working Resist In The Literature . We Have Investigated An Image Reversal Process For I-Line (365 Nm Wavelength) Lithography To Improve Resolution And Exposure Latitude Compared To A Standard I-Line Resist System. In This Reversal Process, The Resist Is Exposed Through A Mask, Baked After The Exposure, Flood Exposed, And Finally Developed In A Dilute Aqueous Base Solution To Generate A High Quality, Negative Tone Image Of The Mask. In This Paper , We Report Our Study Of I-Line Image Reversal Processing To Push The Resolution Limit Of Our Optical Exposure Tool To Half Micron Sizes. The Effects Of Various Resist Processing Variables On Linewidth, Resolution And Mask Bias Will Be Discussed.

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