Abstract
An n-type hydrogenated amorphous silicon ( n+-a-Si:H) field emitter array (FEA) was fabricated on a glass substrate and characterized. The n+-a-Si:H film was deposited by a conventional plasma-enhanced-chemical-vapor-deposition (PECVD) technique using a silane and phosphine mixed gas at a temperature lower than 350° C. The present film showed a low resistivity of 50 Ω· cm. The FEA consists of 1-µm-high emitter tips and a gate electrode with 1.8-µm-diameter openings. Using the fabricated FEA (25-tips), an emission current of 11 µ A was obtained at a gate voltage of 100 V.
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