Abstract
Conductive metal oxide contacts were used in the fabrication of fatigue-resistant lead zirconate titanate (PZT) capacitors. The successful fabrication and characterization of PZT thin-film capacitors with transparent conducting indium tin oxide (ITO) contacts using a combination of metallo-organic decomposition (MOD) and rf-sputtering are described. High remnant polarization, improved fatigue resistance, and a leakage current density of 10 −4 A/cm 2 were found in ITO-PZT-ITO capacitors.
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