Abstract
AbstractWe present a new generation of nano‐electromechanical systems (NEMS), which are realized by doping the semiconductor base material. In contrast to the traditional approach these doped NEMS (D‐NEMS) do not require a metallization layer. This makes them far lighter and hence increases resonance frequency and quality factor. Additionally, D‐NEMS can be tuned from the conductive state into an insulating one. This will enable a host of new device designs, like mechanically tunable pin‐junctions and nanomechanical single electron switches. We demonstrate D‐NEMS fabrication and operation from the intrinsic, to the light, and to the heavy regime of doping. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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