Abstract
Three types of fabrication cycle based on the use of direct wafer bonding are developed for making pairs of discrete p-n-junctions separated by an insulating layer. The forward and reverse branches of the I–V characteristics of the resulting diodes are investigated. For all three fabrication cycles, the differential resistance of the forward branch of the discrete p-n-junctions is ∼0.01Ω, the reverse breakdown is ∼400 V, and the width of the aperture region for the back-to-back diodes is 0.22 V. Taken as a whole, these data, along with the high integrated photosensitivity of the diodes, indicate that direct wafer bonding produces no oxide barrier between the p-and n-regions and forms high-quality interfaces.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.